Modeling and Analysis of Electrical Characteristics of Symmetric Double Gate HEMT

With the development of 6G communication technology, gallium nitrite (GaN) high electron mobility transistor (HEMT) devices have become a new generation of power devices in the field of power electronics, and have greater application prospects in high frequency and high-power applications. In this article, the P-GaN HEMT and Symmetric Double Gate (SDG) HEMT are modelled and simulated by using Sentaurus TCAD tool. The DC characteristics of two different structures are studied. Compared with the SDG HEMT and P-GaN HEMT, the SDG HEMT has better electrical characteristics. Under the same applied voltage, the drain current of SDG HEMT is almost twice that of P-GaN HEMT. Meanwhile, the breakdown voltage of SDG HEMT is lower than that of P-GaN HEMT. This study is beneficial for the design and optimization of electronic devices.