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2021•Unpublished venueRequires access

Recent advances in space mapping technique modeling GaN HEMT

Jinyuan Cui, Feng Feng, Zhihao Zhao, Wen-Yuan Liu, Weicong Na, Qi‐Jun Zhang

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Abstract

Gallium nitride (GaN) HEMT has board application prospect for 5G wireless communication systems. This paper reviews the recent advance in space mapping technique for GaN HEMT modeling technique. A novel decomposed-based space mapping technique is discussed. This method is a systematic modeling approach with fast developing speed. A 2×350 µm GaN HEMT device are used as an example.

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What this paper is about

Gallium nitride (GaN) HEMT has board application prospect for 5G wireless communication systems. This paper reviews the recent advance in space mapping technique for GaN HEMT modeling technique. A novel decomposed-based space mapping technique is discussed. This method is a systematic modeling approach with fast developing speed. A 2×350 µm GaN HEMT device are used as an example.

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OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Gallium nitride (GaN) HEMT has board application prospect for 5G wireless communication systems. This paper reviews the recent advance in space mapping technique for GaN HEMT modeling technique. A novel decomposed-based space mapping technique is discussed. This method is a systematic modeling approach with fast developing speed. A 2×350 µm GaN HEMT device are used as an example.

Key concepts: High-electron-mobility transistor, Gallium nitride, Space mapping, Wide-bandgap semiconductor, Wireless, Computer science, Electronic engineering, Space (punctuation)

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