2016•Unpublished venueRequires access

Evaluations and applications of GaN HEMTs for power electronics

He Li, Chengcheng Yao, Lixing Fu, Xuan Zhang, Jin Wang

Abstract

This paper presents an overview of the latest Gallium Nitride High Electron Mobility Transistor (GaN HEMT) technology. The latest development and challenges of 30 V to 650 V GaN HEMTs are summarized. The evaluation methodology of the GaN HEMT is presented, including static characterization and dynamic characterization. The paper also demonstrates the application of GaN HEMTs developed by Center for High Performance Power Electronics (CHPPE). Various high efficiency high power density circuit prototypes based on GaN HEMTs are presented.

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Available abstract

Key concepts: High-electron-mobility transistor, Gallium nitride, Transistor, Power electronics, Materials science, Wide-bandgap semiconductor, Optoelectronics, Characterization (materials science)