2016•Physica E Low-dimensional Systems and NanostructuresRequires access

Dual trench AlGaN/GaN HEMT on SiC substrate: A novel device to improve the breakdown voltage and high power performance

Majid Ghaffari, Ali A. Orouji

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Key concepts: High-electron-mobility transistor, Breakdown voltage, Materials science, Trench, Transconductance, Optoelectronics, Gallium nitride, Transistor

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Dual trench AlGaN/GaN HEMT on SiC substrate: A novel device to improve the breakdown voltage and high power performance — Research Paper | ScholarLens