2023•AIP conference proceedingsRequires access

Physical simulation and modeling of low ohmic contact resistivity for gallium nitride high electron mobility transistor (GaN HEMT) device

Tung Kok Siong, Mohamed Fauzi Packeer Mohamed, Mohd Syamsul Nasyriq Samsol Baharin, Alhan Farhanah Abd Rahim

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Key concepts: Ohmic contact, High-electron-mobility transistor, Gallium nitride, Materials science, Transistor, Optoelectronics, Wide-bandgap semiconductor, Electrical resistivity and conductivity

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Physical simulation and modeling of low ohmic contact resistivity for gallium nitride high electron mobility transistor (GaN HEMT) device — Research Paper | ScholarLens