ScholarLens Back to search
2023•Unpublished venueRequires access

Temperature Dependent Large-Signal Modeling of GaN HEMTs at Ka-Band using the ASM-HEMT

Nicholas C. Miller, Alexis Brown, Michael Elliott, Ryan Gilbert

Open publisher page 5 citations

Abstract

This paper presents for the first time a temperature dependent ASM-HEMT model extracted from a gallium nitride (GaN) high electron mobility transistor (HEMT) validated with Ka-band on-wafer large-signal measurements. Modifications are made to the standard ASM-HEMT model to accurately model the DC, small-signal, and large-signal measurements collected as a function of ambient temperature. This work could shed light on the temperature dependence of GaN HEMTs and could enable the rapid design of high temperature integrated circuits.

About this research paper

What this paper is about

This paper presents for the first time a temperature dependent ASM-HEMT model extracted from a gallium nitride (GaN) high electron mobility transistor (HEMT) validated with Ka-band on-wafer large-signal measurements. Modifications are made to the standard ASM-HEMT model to accurately model the DC, small-signal, and large-signal measurements collected as a function of ambient temperature. This work could shed light on the temperature dependence of GaN HEMTs and could enable the rapid design of high temperature integrated circuits.

Why it matters

OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

This paper presents for the first time a temperature dependent ASM-HEMT model extracted from a gallium nitride (GaN) high electron mobility transistor (HEMT) validated with Ka-band on-wafer large-signal measurements. Modifications are made to the standard ASM-HEMT model to accurately model the DC, small-signal, and large-signal measurements collected as a function of ambient temperature. This work could shed light on the temperature dependence of GaN HEMTs and could enable the rapid design of high temperature integrated circuits.

Key concepts: High-electron-mobility transistor, Gallium nitride, Optoelectronics, Materials science, SIGNAL (programming language), Wide-bandgap semiconductor, Transistor, Large-signal model

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Temperature Dependent Large-Signal Modeling of GaN HEMTs at Ka-Band using the ASM-HEMT — Research Paper | ScholarLens