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2019•Unpublished venueRequires access

EOFM measurements of lateral and vertical Bipolar Transistors in Silicon and SiGe:C Technologies

A. Beyreuther, Norbert Herfurth, Elham Amini, Tohru Nakamura, Gunter Fischer, Stefan Keil, Christian Boit

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Abstract

This publication presents Electro-Optical Frequency Mapping (EOFM) on lateral and vertical bipolar junction transistors. The acquired EOFM measurements are used to characterize the different operation modes of a parasitic bipolar junction transistor, as well as a modern heterojunction bipolar transistors (HBT) in SiGe:C BiCMOS technology. Furthermore, EOFM results of a golden and a faulty SiGe:C HBT are compared, showing clearly distinguishable results.

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What this paper is about

This publication presents Electro-Optical Frequency Mapping (EOFM) on lateral and vertical bipolar junction transistors. The acquired EOFM measurements are used to characterize the different operation modes of a parasitic bipolar junction transistor, as well as a modern heterojunction bipolar transistors (HBT) in SiGe:C BiCMOS technology. Furthermore, EOFM results of a golden and a faulty SiGe:C HBT are compared, showing clearly distinguishable results.

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Available abstract

This publication presents Electro-Optical Frequency Mapping (EOFM) on lateral and vertical bipolar junction transistors. The acquired EOFM measurements are used to characterize the different operation modes of a parasitic bipolar junction transistor, as well as a modern heterojunction bipolar transistors (HBT) in SiGe:C BiCMOS technology. Furthermore, EOFM results of a golden and a faulty SiGe:C HBT are compared, showing clearly distinguishable results.

Key concepts: Heterojunction bipolar transistor, Bipolar junction transistor, Heterostructure-emitter bipolar transistor, Optoelectronics, Heterojunction, Materials science, BiCMOS, Transistor

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EOFM measurements of lateral and vertical Bipolar Transistors in Silicon and SiGe:C Technologies — Research Paper | ScholarLens