2002•Unpublished venueRequires access

A high performance low complexity SiGe HBT for BiCMOS integration

A. Chantre, M. Marty, J.L. Regolini, M. Mouis, J. de Pontcharra, D. Dutartre, Christine Morin, D. Gloria, S. Jouan, R. Pantel, M. Laurens, A. Monroy

Open publisher page 28 citations

Abstract

A low complexity 0.35 /spl mu/m SiGe HBT technology, using a quasi self-aligned emitter/base structure on a non-selective Si/SiGe epitaxial base, is described. Excellent high frequency performances (f/sub max/ up to 71 GHz) are obtained, opening the way to a highly manufacturable SiGe BiCMOS technology.

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Available abstract

Key concepts: Heterojunction bipolar transistor, BiCMOS, Silicon-germanium, Common emitter, Materials science, Optoelectronics, Base (topology), Epitaxy