2006•Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physicsRequires access

SiGe HBT BiCMOS technology for millimeter‐wave applications

Alvin Joseph, M. Dahlstrǒm, Qizhi Liu, B. A. Orner, Xuefeng Liu, David C. Sheridan, Robert M. Rassel, J. Dunn, D. Ahlgren

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Abstract

We present the advances in Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) and BiCMOS technology capabilities to address the emerging millimetre-wave (mmWave) applications. SiGe HBTs with f MAX performance reaching 350 GHz that are integrated with advanced CMOS and high-frequency passives is envisioned to allow better integration capability for mmWave applications. This capability of SiGe HBT BiCMOS technology is discussed relative to an InP HBT technology. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Key concepts: Heterojunction bipolar transistor, BiCMOS, Silicon-germanium, Extremely high frequency, CMOS, Bipolar junction transistor, Heterojunction, Electrical engineering