ScholarLens Back to search
2005•Unpublished venueRequires access

Advances in SiGe HBT BiCMOS technology

Alvin Joseph, L. Lanzerotti, X. Liu, David C. Sheridan, J. Johnson, Qiqi Liu, J. Dunn, Jae-Sung Rieh, D.L. Harame

Open publisher page 11 citations

Abstract

Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology has established a strong foothold in the communications marketplace by offering a cost competitive solution for a myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9-77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with state-of-the-art CMOS and passive elements. We present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.

About this research paper

What this paper is about

Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology has established a strong foothold in the communications marketplace by offering a cost competitive solution for a myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9-77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with state-of-the-art CMOS and passive elements. We present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.

Why it matters

OpenAlex reports 11 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology has established a strong foothold in the communications marketplace by offering a cost competitive solution for a myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9-77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with state-of-the-art CMOS and passive elements. We present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.

Key concepts: Heterojunction bipolar transistor, BiCMOS, Silicon-germanium, CMOS, Bipolar junction transistor, Electrical engineering, Heterojunction, Transistor

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
Advances in SiGe HBT BiCMOS technology — Research Paper | ScholarLens