ScholarLens Back to search
2019•Unpublished venueRequires access

Dark Current Analysis of Vertical p-i-n Photodetectors on a Germanium-on-Insulator Platform

Kwang Hong Lee, Yiding Lin, Bongkwon Son, Chuan Seng Tan

Open publisher page 2 citations

Abstract

Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.

About this research paper

What this paper is about

Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.

Key concepts: Photodetector, Germanium, Dark current, Optoelectronics, Quantum tunnelling, Insulator (electricity), Current (fluid), Materials science

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Dark Current Analysis of Vertical p-i-n Photodetectors on a Germanium-on-Insulator Platform — Research Paper | ScholarLens