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2017•Journal of Crystal GrowthRequires access

Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors

Xiyu Chen, Yonggang Zhang, Yi Gu, Xiaoli Ji, S. P. Xi, Binyang Du, Yingjie Ma, Weiguang Ji, Yaqing Shi, A.Z. Li

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Key concepts: Photodetector, Dark current, Optoelectronics, Deep-level transient spectroscopy, Materials science, Trap (plumbing), Physics, Silicon

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Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors — Research Paper | ScholarLens