2003•Unpublished venueRequires access

A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

B.A. Orner, Liu Liu, Rainey, Stricker, Geiss, Gray, Zierak, Gordon, Collins, Ramachandran, Hodge, Willets, Joseph Joseph, Dunn, Rieh, Jeng, Eld, Freeman, Ahlgren

Open publisher page 44 citations

Abstract

We present for the first time a very high performance SiGe HBT with f/sub T/ = 200 GHz and f/sub max/ = 280 GHz that has been successfully integrated with IBM's standard 0.13 /spl mu/m foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.

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Key concepts: Heterojunction bipolar transistor, BiCMOS, IBM, Silicon-germanium, CMOS, Electrical engineering, Node (physics), Optoelectronics