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2023•Unpublished venueRequires access

Heterointegration of mm-Wave InP-HBT Power Amplifier Chiplets on SiGe-BiCMOS Chip

Hady Yacoub, Marko Rausch, Christoph Stölmacker, Ralf Dörner, Maruf Hossain, Ina Ostermay, Taylor Moule, Matthias Wietstruck, Steffen Knigge, Olaf Krüger, W. Heinrich

Open publisher page 4 citations

Abstract

In this paper we demonstrate InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium-based microbumps allows for seamless integration with minimal losses up to more than 300 GHz. A single-stage InP-HBT power amplifier was used to highlight the functionality of the heterointegration approach.

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What this paper is about

In this paper we demonstrate InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium-based microbumps allows for seamless integration with minimal losses up to more than 300 GHz. A single-stage InP-HBT power amplifier was used to highlight the functionality of the heterointegration approach.

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OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this paper we demonstrate InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium-based microbumps allows for seamless integration with minimal losses up to more than 300 GHz. A single-stage InP-HBT power amplifier was used to highlight the functionality of the heterointegration approach.

Key concepts: Heterojunction bipolar transistor, BiCMOS, Amplifier, Indium phosphide, Materials science, Optoelectronics, Chip, Electrical engineering

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Heterointegration of mm-Wave InP-HBT Power Amplifier Chiplets on SiGe-BiCMOS Chip — Research Paper | ScholarLens