2016•Materials science forumOpen access

Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance

Masayuki P. Yamamoto, Yasunori Tanaka, Tsutomu Yatsuo, Koji Yano

Abstract

We investigate a cascode configuration of a normally-on SiC-Buried Gate Static Induction Transistor (SiC-BGSIT) and Si-MOSFET as an alternative switching device of the SiC-MOSFET. It is shown that the transconductance of our cascode device is much higher than that of commercial SiC-MOSFETs while the switching speed is much faster than that of normally-off SiC-BGSITs. The origin of the fast switching speed in this cascode configuration is discussed in terms of a simulated reverse transfer capacitance.

About this research paper

What this paper is about

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Transconductance, Cascode, Materials science, MOSFET, Capacitance, Transistor, Optoelectronics, Electrical engineering