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In0.49GaP/Al0.45GaAs E-pHEMT with High Gate Forward Turn-on Voltage & High Transconductance Linearity

Kyoungchul Jang, Ju‐Yong Lee, Jaehak Lee, Kwang-Seok Seo

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Abstract

We present In0.49Gap/Al0.45GaAs Enhancement-mode pseudomorphic HEMT (E-pHEMT) with high gate forward turn-on voltage and high transconductance linearity. E-pHEMT’s with high gate forward turn-on voltage usually suffer from severe transconductance reduction at high Vgs. The low electron carrier density of ungated region of E-pHEMT, especially of gate side recess region, is closely related to that transconductance reduction. We adopted Al0.45GaAs as a barrier for higher gate forward turn-on voltage and In0.49Gap as an etch stop, which causes less deep levels, for higher transconductance at high gate bias. The gate forward turn-on voltage was around 1.1V. The transconductance of 0.5μm E-pHEMT was over 90% of gm.max for the gate voltage swing of 0.65V.

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What this paper is about

We present In0.49Gap/Al0.45GaAs Enhancement-mode pseudomorphic HEMT (E-pHEMT) with high gate forward turn-on voltage and high transconductance linearity. E-pHEMT’s with high gate forward turn-on voltage usually suffer from severe transconductance reduction at high Vgs. The low electron carrier density of ungated region of E-pHEMT, especially of gate side recess region, is closely related to that transconductance reduction. We adopted Al0.45GaAs as a barrier for higher gate forward turn-on voltage and In0.49Gap as an etch stop, which causes less deep levels, for higher transconductance at high gate bias. The gate forward turn-on voltage was around 1.1V. The transconductance of 0.5μm E-pHEMT was over 90% of gm.max for the gate voltage swing of 0.65V.

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Available abstract

We present In0.49Gap/Al0.45GaAs Enhancement-mode pseudomorphic HEMT (E-pHEMT) with high gate forward turn-on voltage and high transconductance linearity. E-pHEMT’s with high gate forward turn-on voltage usually suffer from severe transconductance reduction at high Vgs. The low electron carrier density of ungated region of E-pHEMT, especially of gate side recess region, is closely related to that transconductance reduction. We adopted Al0.45GaAs as a barrier for higher gate forward turn-on voltage and In0.49Gap as an etch stop, which causes less deep levels, for higher transconductance at high gate bias. The gate forward turn-on voltage was around 1.1V. The transconductance of 0.5μm E-pHEMT was over 90% of gm.max for the gate voltage swing of 0.65V.

Key concepts: Transconductance, Materials science, High-electron-mobility transistor, Linearity, Turn (biochemistry), Optoelectronics, Voltage, Electrical engineering

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In0.49GaP/Al0.45GaAs E-pHEMT with High Gate Forward Turn-on Voltage & High Transconductance Linearity — Research Paper | ScholarLens