Analysis of output transconductance of FinFETs incorporating quantum mechanical and temperature effects with 3D temperature distribution

The FinFET is considered to be one of the most promising device structure to extend CMOS scaling into the nanometer regime. Quantum mechanical effects (QMEs) become significant for the Fin width is below 20 nm. However, this important issue has not been addressed [1] for transconductance modeling. Moreover, output transconductance depends on mobility. Mobility is temperature dependent. So, temperature dependency of output transconductance should also be considered. Output transconductance also depends on threshold voltage. This threshold voltage changes due to short channel effect and drain induced barrier lowering which are other significant issues to be considered for modeling output transconductance. Again, this paper has included quantum mechanical effect in output transconductance model that is missing in literature. In this work, we present a compact model for output transconductance incorporating all these issues.