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2010•Unpublished venueRequires access

A Voltage Regulator Circuit for 13.56MHz Passive RFID Tag

Dai Qing-yuan

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Abstract

A novel voltage regulator was designed for 13.56 MHz passive RFID tags by using 0.13 μm analog CMOS technology.The output voltage of the circuit could be stabilized at 2.8 V by using double-end negative feedback circuit to control voltages at both ends of the charge pump separately.The over-voltage protection circuit could prevent bypass NMOS transistors from breakdown by induced voltage up to 13 V,and the self energy-saving circuit could keep limited electric charges from flowing backwards to the antenna.The circuit was simulated based on Huahong-NEC's EF130 process.Simulation results showed that the proposed regulator could operate in a wide range of input voltages from 3 V to 7 V,and output voltages between 2.813 V and 2.826 V,which meet the voltage requirement for baseband and EEPROM in 13.56 MHz RFID tag.

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What this paper is about

A novel voltage regulator was designed for 13.56 MHz passive RFID tags by using 0.13 μm analog CMOS technology.The output voltage of the circuit could be stabilized at 2.8 V by using double-end negative feedback circuit to control voltages at both ends of the charge pump separately.The over-voltage protection circuit could prevent bypass NMOS transistors from breakdown by induced voltage up to 13 V,and the self energy-saving circuit could keep limited electric charges from flowing backwards to the antenna.The circuit was simulated based on Huahong-NEC's EF130 process.Simulation results showed that the proposed regulator could operate in a wide range of input voltages from 3 V to 7 V,and output voltages between 2.813 V and 2.826 V,which meet the voltage requirement for baseband and EEPROM in 13.56 MHz RFID tag.

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Available abstract

A novel voltage regulator was designed for 13.56 MHz passive RFID tags by using 0.13 μm analog CMOS technology.The output voltage of the circuit could be stabilized at 2.8 V by using double-end negative feedback circuit to control voltages at both ends of the charge pump separately.The over-voltage protection circuit could prevent bypass NMOS transistors from breakdown by induced voltage up to 13 V,and the self energy-saving circuit could keep limited electric charges from flowing backwards to the antenna.The circuit was simulated based on Huahong-NEC's EF130 process.Simulation results showed that the proposed regulator could operate in a wide range of input voltages from 3 V to 7 V,and output voltages between 2.813 V and 2.826 V,which meet the voltage requirement for baseband and EEPROM in 13.56 MHz RFID tag.

Key concepts: Dropout voltage, Electrical engineering, Voltage, Voltage regulator, Voltage divider, Low-dropout regulator, NMOS logic, Engineering

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