2012Unpublished venueRequires access

Implementation of low dropout regulator with low bandgap reference voltage circuit for RFID tag applications

Min-Chin Lee, Chi-Chun Hu, Zong-Wei Lin

Open publisher page 13 citations

Abstract

This paper proposes a high performance LDO with low bandgap reference voltage circuit that have a low temperature coefficient and stable supply voltage for applications to RFID Tag power management module. This proposed circuit is design and implemented using the TSMC 0.35µm CMOS 2P4M process. Based on simulated and measured results, the chip size is 0.686 × 0.805mm2with power dissipation about 1.32mW, and the operation temperature range form 0°C to 100°C with temperature coefficient about 10.52ppm/°C. The chip supply voltage can from 2.9V to 3.3V, with 4mV /V line regulation and 31uV /mA load regulation (output current from 0 ∼ 100mA variation), provides an stable output voltage of 1.61V and its low bandgap reference voltage circuit output reference voltage can stable at 0.65V.

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What this paper is about

This paper proposes a high performance LDO with low bandgap reference voltage circuit that have a low temperature coefficient and stable supply voltage for applications to RFID Tag power management module. This proposed circuit is design and implemented using the TSMC 0.35µm CMOS 2P4M process. Based on simulated and measured results, the chip size is 0.686 × 0.805mm2with power dissipation about 1.32mW, and the operation temperature range form 0°C to 100°C with temperature coefficient about 10.52ppm/°C. The chip supply voltage can from 2.9V to 3.3V, with 4mV /V line regulation and 31uV /mA load regulation (output current from 0 ∼ 100mA variation), provides an stable output voltage of 1.61V and its low bandgap reference voltage circuit output reference voltage can stable at 0.65V.

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Available abstract

This paper proposes a high performance LDO with low bandgap reference voltage circuit that have a low temperature coefficient and stable supply voltage for applications to RFID Tag power management module. This proposed circuit is design and implemented using the TSMC 0.35µm CMOS 2P4M process. Based on simulated and measured results, the chip size is 0.686 × 0.805mm2with power dissipation about 1.32mW, and the operation temperature range form 0°C to 100°C with temperature coefficient about 10.52ppm/°C. The chip supply voltage can from 2.9V to 3.3V, with 4mV /V line regulation and 31uV /mA load regulation (output current from 0 ∼ 100mA variation), provides an stable output voltage of 1.61V and its low bandgap reference voltage circuit output reference voltage can stable at 0.65V.

Key concepts: Bandgap voltage reference, Line regulation, Voltage reference, Dropout voltage, Power supply rejection ratio, Low-dropout regulator, Temperature coefficient, Voltage

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