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2014•Unpublished venueRequires access

A low power voltage regulator for passive UHF RFID sensors

Mathieu Guérin, Emmanuel Bergeret, Pascal Lauque, P. Pannier

Open publisher page 3 citations

Abstract

In this paper, a low power voltage regulator is presented. The regulator is based on the principle of a resistor-free voltage reference using CMOS transistors in sub-threshold region. An error op-amp is also designed to control the output current flowing through a pass transistor. The voltage regulator was manufactured using the 130 nm ST Microelectronics technology and represents a total area of 0.020 square millimeters. The measured regulated voltage has a temperature coefficient of 49 ppm per Celsius degree and a line regulation of 1.3 mV per Volt. These featured will permit to combine the regulator with a RF-to-DC rectifier's output voltage to supply a passive RFID temperature sensor.

About this research paper

What this paper is about

In this paper, a low power voltage regulator is presented. The regulator is based on the principle of a resistor-free voltage reference using CMOS transistors in sub-threshold region. An error op-amp is also designed to control the output current flowing through a pass transistor. The voltage regulator was manufactured using the 130 nm ST Microelectronics technology and represents a total area of 0.020 square millimeters. The measured regulated voltage has a temperature coefficient of 49 ppm per Celsius degree and a line regulation of 1.3 mV per Volt. These featured will permit to combine the regulator with a RF-to-DC rectifier's output voltage to supply a passive RFID temperature sensor.

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OpenAlex reports 3 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this paper, a low power voltage regulator is presented. The regulator is based on the principle of a resistor-free voltage reference using CMOS transistors in sub-threshold region. An error op-amp is also designed to control the output current flowing through a pass transistor. The voltage regulator was manufactured using the 130 nm ST Microelectronics technology and represents a total area of 0.020 square millimeters. The measured regulated voltage has a temperature coefficient of 49 ppm per Celsius degree and a line regulation of 1.3 mV per Volt. These featured will permit to combine the regulator with a RF-to-DC rectifier's output voltage to supply a passive RFID temperature sensor.

Key concepts: Voltage regulator, Low-dropout regulator, Line regulation, Dropout voltage, Electrical engineering, Resistor, Voltage divider, Voltage

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