2001•Journal of Electron DevicesRequires access

Chemical Mechanical Polishing of Silica Dielectric in ULSI Mutilevel Metallization

Baimei Tan

Abstract

The mechanism, the choosing of processing conditions and content and effect of polishing slurry of silica dielectric in ULSI multilevel are analyzed. The way of increasing the polishing rate, improving of the surface condition and avoiding metallic ions by using chemical method is outlined. Projects are suggested to solve the present problems.

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Key concepts: Polishing, Chemical-mechanical planarization, Slurry, Materials science, Dielectric, Metal, Composite material, Metallurgy