2001•Journal of Hebei University of TechnologyRequires access

Chemical Mechanical Polishing of Silica Dielectric in ULSI Manufacturing

Lian Jun

Abstract

The mechanism, the choosing of processing conditions and content and effect of polishing slurry of silica dielectric in ULSI multilevel are outlined. The present problems of slurry and CMP technique for SiO2 dielectric are analyzed. The way of increasing the polishing rate, improving of the surface condition and avoiding metallic ions is discussed.

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Key concepts: Polishing, Chemical-mechanical planarization, Slurry, Dielectric, Materials science, Composite material, Metal, Metallurgy