2006•Micronanoelectronic TechnologyRequires access

Study of the Chemical-Mechanical Global Planarization of Low-k Dielectric in ULSI

Jianxin Zhang

Abstract

The chemical-mechanical global planarization mechanism to the common low-k dielectric material is analyzed.The effect of several factors including pressure,abrasive,pH and temperature in the chemical-mechanical polishing process of low-k dielectric material on the polishing rate and surface appearance are discussed.

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Available abstract

Key concepts: Chemical-mechanical planarization, Dielectric, Polishing, Abrasive, Materials science, Composite material, Low-k dielectric, Optoelectronics