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2002•Unpublished venueRequires access

The CMP study of silica dielectric in ULSI manufacturing

Baimei Tan, Yuling Liu, Weiwei Li, Jianguo Jiang

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Abstract

The mechanism and the choice of processing conditions of silica dielectrics in ULSI manufacturing were studied. The ways of increasing the polishing rate and improving the surface conditions by using a chemical method were suggested. It was shown that small size fumed silica in slurry could solve the problem of surface scratching during dielectric CMP processing. The pH is important to the polish rate, high pH is in favor of decreasing deposits and increasing the polish rate. The polish rate with diamine is higher than with an alkali amine.

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What this paper is about

The mechanism and the choice of processing conditions of silica dielectrics in ULSI manufacturing were studied. The ways of increasing the polishing rate and improving the surface conditions by using a chemical method were suggested. It was shown that small size fumed silica in slurry could solve the problem of surface scratching during dielectric CMP processing. The pH is important to the polish rate, high pH is in favor of decreasing deposits and increasing the polish rate. The polish rate with diamine is higher than with an alkali amine.

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Available abstract

The mechanism and the choice of processing conditions of silica dielectrics in ULSI manufacturing were studied. The ways of increasing the polishing rate and improving the surface conditions by using a chemical method were suggested. It was shown that small size fumed silica in slurry could solve the problem of surface scratching during dielectric CMP processing. The pH is important to the polish rate, high pH is in favor of decreasing deposits and increasing the polish rate. The polish rate with diamine is higher than with an alkali amine.

Key concepts: Chemical-mechanical planarization, Fumed silica, Dielectric, Materials science, Slurry, Polishing, Composite material, Chemical engineering

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