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Design and Simulation of RF SOI LDMOS Power Amplifier

YU Li-yang, RF Circuits

Open publisher page 1 citations

Abstract

The modified SOI LDMOS circuit model is simply introduced. According to this model, a RF power amplifier (PA) is designed and simulated by using a RF simulator ADS. Two-stage architecture is adopted in the RF PA design. S parameter design method and load-pull design method are used. The simulation result shows that the gain is 15dB, the power output is 25 dBm and the power added efficiency is more than 40%.

About this research paper

What this paper is about

The modified SOI LDMOS circuit model is simply introduced. According to this model, a RF power amplifier (PA) is designed and simulated by using a RF simulator ADS. Two-stage architecture is adopted in the RF PA design. S parameter design method and load-pull design method are used. The simulation result shows that the gain is 15dB, the power output is 25 dBm and the power added efficiency is more than 40%.

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Available abstract

The modified SOI LDMOS circuit model is simply introduced. According to this model, a RF power amplifier (PA) is designed and simulated by using a RF simulator ADS. Two-stage architecture is adopted in the RF PA design. S parameter design method and load-pull design method are used. The simulation result shows that the gain is 15dB, the power output is 25 dBm and the power added efficiency is more than 40%.

Key concepts: LDMOS, RF power amplifier, Amplifier, Silicon on insulator, Power (physics), Electronic engineering, Load pull, Power-added efficiency

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