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Research on the Electro-Thermal Memory Effect of LDMOS RF Power Amplifier

Liu Yuan-an

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Abstract

Taking LDMOS RF power amplifier as example,electro-thermal model of LDMOS FET was introduced.The quantificational relation of chip temperature and instantaneous dissipative power of LDMOS FET in theory was derived.The cause of the electro-thermal effect of the amplifier was revealed.The results of the simulations and experiments demonstrated the influences of electrothermal memory effect on the(RFPA's) performances,based on this general methods for reducing the memory effect are proposed.

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What this paper is about

Taking LDMOS RF power amplifier as example,electro-thermal model of LDMOS FET was introduced.The quantificational relation of chip temperature and instantaneous dissipative power of LDMOS FET in theory was derived.The cause of the electro-thermal effect of the amplifier was revealed.The results of the simulations and experiments demonstrated the influences of electrothermal memory effect on the(RFPA's) performances,based on this general methods for reducing the memory effect are proposed.

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Available abstract

Taking LDMOS RF power amplifier as example,electro-thermal model of LDMOS FET was introduced.The quantificational relation of chip temperature and instantaneous dissipative power of LDMOS FET in theory was derived.The cause of the electro-thermal effect of the amplifier was revealed.The results of the simulations and experiments demonstrated the influences of electrothermal memory effect on the(RFPA's) performances,based on this general methods for reducing the memory effect are proposed.

Key concepts: LDMOS, Amplifier, RF power amplifier, Dissipative system, Electrical engineering, Power (physics), Thermal, Radio frequency

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