ScholarLens Back to search
2009•Research & Progress of SSE Solid State ElectronicsRequires access

Extraction of the LDMOS Transistor's Shunt Capacitance and Design of Class-E Power Amplifiers

Yingjie Xu

Open publisher page 0 citations

Abstract

This paper presents a 2.14 GHz high efficiency class-E power amplifier based on LDMOS transistors.Using the parallel resonant method,the key parameter Cds of the transistor is extracted by simulation on ADS.Based on this parameter,feed network and load network are designed to reduce harmonics.Finally,the experimental result is given and matches with simulation data.It gives an output power of 38.55 dBm with a power-added efficiency of 64.1%.

About this research paper

What this paper is about

This paper presents a 2.14 GHz high efficiency class-E power amplifier based on LDMOS transistors.Using the parallel resonant method,the key parameter Cds of the transistor is extracted by simulation on ADS.Based on this parameter,feed network and load network are designed to reduce harmonics.Finally,the experimental result is given and matches with simulation data.It gives an output power of 38.55 dBm with a power-added efficiency of 64.1%.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

This paper presents a 2.14 GHz high efficiency class-E power amplifier based on LDMOS transistors.Using the parallel resonant method,the key parameter Cds of the transistor is extracted by simulation on ADS.Based on this parameter,feed network and load network are designed to reduce harmonics.Finally,the experimental result is given and matches with simulation data.It gives an output power of 38.55 dBm with a power-added efficiency of 64.1%.

Key concepts: LDMOS, Transistor, Amplifier, Transistor model, Harmonics, Capacitance, Electronic engineering, Electrical engineering

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Extraction of the LDMOS Transistor's Shunt Capacitance and Design of Class-E Power Amplifiers — Research Paper | ScholarLens