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2013•Unpublished venueRequires access

Advantage of TCAD to analyze RF-LDMOS for the broadband power amplifier

Ahsan Ullah Kashif, Sher Azam, Khizar Hayat, Muhammad Imran

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Abstract

Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a broadband PA based on computational load-pull (CLP) analysis. To validate TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB PA with an output matching network. The large signal simulation results verify the optimum impedance value (Zf) by providing a desired RF output power of 30.8 dBm.

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What this paper is about

Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a broadband PA based on computational load-pull (CLP) analysis. To validate TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB PA with an output matching network. The large signal simulation results verify the optimum impedance value (Zf) by providing a desired RF output power of 30.8 dBm.

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Available abstract

Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a broadband PA based on computational load-pull (CLP) analysis. To validate TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB PA with an output matching network. The large signal simulation results verify the optimum impedance value (Zf) by providing a desired RF output power of 30.8 dBm.

Key concepts: LDMOS, Amplifier, Electronic engineering, Broadband, Impedance matching, Computer science, RF power amplifier, Large-signal model

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