2004•Micronanoelectronic TechnologyRequires access

Development of high frequency high power Si_(1-x)Ge_x/Si HBT

Qiming Wang

Abstract

An overview of the development of Si1-xGex/Si HBT is presented. Compared to Ⅲ-Ⅴ group material,power Si1-xGex/Si HBT have many advantages in RF and wireless application. Some main progress of research and development on Si1-xGex/Si HBT were reviewed in the paper. Some problems in the research and technics were also discussed. Future prospects are explored.

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Available abstract

Key concepts: Heterojunction bipolar transistor, Materials science, Electrical engineering, Engineering physics, Optoelectronics, Power (physics), Engineering, Physics