2001•Journal of Electron DevicesRequires access

The Study of Si/SiGe/Si HBT and Its Compatibility with Si Process

Liao Xiaoping

Abstract

We have conducted researches on Si/SiGe/Si HBT and its compatibility with Si process. Based on some key single processes, five high frequency constructions and one low noise construction are put up, and the mesa Si/SiGe/Si HBT and the low noise Si/SiGe/Si HBT are made out. Based on above researches, the better Si/SiGe/Si HBT will be made out.

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Available abstract

Key concepts: Heterojunction bipolar transistor, Materials science, Silicon-germanium, Compatibility (geochemistry), Optoelectronics, Silicon, Engineering physics, Electronic engineering