Liao Xiaoping
Abstract
Based on the researches on Si/SiGe/Si HBT and its compatibility with Si process, one low noise Si/SiGe/Si HBT construction is fabricated. The HBT's DC characterization and its low frequency noise are measured and analyzed. Based on above researches, the better low noise Si/SiGe/Si HBT will be made out.
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Based on the researches on Si/SiGe/Si HBT and its compatibility with Si process, one low noise Si/SiGe/Si HBT construction is fabricated. The HBT's DC characterization and its low frequency noise are measured and analyzed. Based on above researches, the better low noise Si/SiGe/Si HBT will be made out.
Key concepts: Heterojunction bipolar transistor, Materials science, Infrasound, Optoelectronics, Noise (video), Low frequency, Silicon-germanium, Characterization (materials science)