Qiming Wang
Abstract
Si_(1-x)Ge_x/Si HBT has been widely used in RF and wireless application.A power Si_(1-x)Ge_x/Si HBT is the very important device in RF power amplifier(PA).An overview on the design of power Si_(1-x)Ge_x/Si HBT is presented.Some problems including the choice of some main design parameters are particularly discussed.Some advices and design rules are proposed.
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Si_(1-x)Ge_x/Si HBT has been widely used in RF and wireless application.A power Si_(1-x)Ge_x/Si HBT is the very important device in RF power amplifier(PA).An overview on the design of power Si_(1-x)Ge_x/Si HBT is presented.Some problems including the choice of some main design parameters are particularly discussed.Some advices and design rules are proposed.
Key concepts: Heterojunction bipolar transistor, Amplifier, Materials science, Power (physics), Electrical engineering, Optoelectronics, RF power amplifier, Radio frequency