MOCVD Process Numerical Simulation of GaN and Geometrical Optimization of the Showerhead Reactor

Two-dimensional numerical study on transport phenomena and growth of GaN in the showerhead MOCVD reactor were conducted.By varying the reactor geometry and distribution mode of inlet,the corresponding flow,thermal fields and film deposition rate inside the reactor were calculated.It is found that flat flow lines without swirl and thin temperature gradient above the susceptor are crucial to improve the rate and uniformity of the film deposition by susceptor rotation.The circular geometrical reactor and small diameter inlet holes can be employed to improve the uniformity of the film growth.