A Study on the Reactor Configuration and Thermal Conditions for the Growth of High Quality Thin Film of GaN Layer

Numerical calculation has been performed to investigate the transport phenomena in the horizontal reactor which has two different gas inlets for MOCVD(metalorganic chemical vapor deposition) The full elliptic governing equations for continuity, momentum, energy and chemical species are solved by using the commercial code FLUENT It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactants The numerical simulations demonstrate that flow rate of each species, inlet geometry of the reactor, and its distance from the susceptor as well as the inclination of upper wall of reactor can be used effectively to optimize reactor performance The commonly used idealized boundary conditions are also investigated to predict flow phenomena in the actual deposition system.