2009•Rengong jingti xuebaoRequires access

Numerical Modelling of GaN Growth in Radial Flow MOCVD Reactor with Three-separate Vertical Inlets

Ran Zuo

Abstract

Two-dimensional numerical study on transport process in a radial flow MOCVD reactor with three-separate vertical inlets was conducted.The inflence of operating parameters on concentration of NH3 and TMGa at susceptor surface was investigated.It is found that uniform flow fields and reducing the pressure correspond to higher susceptor concentration.Thermal diffusion is a assignable factor because of large thermal gradient taking place in MOCVD system.

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Key concepts: Susceptor, Metalorganic vapour phase epitaxy, Materials science, Inlet, Temperature gradient, Flow (mathematics), Thermal, Diffusion