Simulation and Analysis of Flow Field in Nitride MOCVD Reactor Chamber

Simulation of the GaN growth in the vertical MOCVD reactor chamber was performed.It was observed that the molar concentration distribution on the surface of the substrate obtained from simulation of the trimethylgallium (TMG),is in good agreement with the thickness distribution of the GaN film.And the results of the simulation showed that the thickness distribution of the film is concerned with that of the vortex flow in the reactor chamber.By analysis of the reason of the vortex flow,the reaction conditions and the geometry shape of the reactor chamber had been optimized.It was found that the vortex flow is reduced significantly,under the conditions of lower pressure,lower wall temperature and bigger radius of gas inlet of the reactor chamber,and the uniformity of the film growth is also improved.