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2003•Journal of Electron DevicesRequires access

Studies on RF Si/SiGe/Si HBT

Yin Gangyi

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Abstract

Based on the process which the Si/SiGe/Si HBT is compatibility with Si, the researches on RF Si/SiGe/Si HBT's RF characterization and its fabrication have been done. The dependence of device characterization frequency fT and maximum oscillation frequency fmax on the key parameters: parasitical resistances and capacitances were analyzed, and these parameters were decided by device construction. RF Si/SiGe/Si HBT is fabricated, whose fT reaches 2.5GHz and ft reaches 2.3GHz. Based on above researches, the better RF Si/SiGe/Si HBT will be made.

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What this paper is about

Based on the process which the Si/SiGe/Si HBT is compatibility with Si, the researches on RF Si/SiGe/Si HBT's RF characterization and its fabrication have been done. The dependence of device characterization frequency fT and maximum oscillation frequency fmax on the key parameters: parasitical resistances and capacitances were analyzed, and these parameters were decided by device construction. RF Si/SiGe/Si HBT is fabricated, whose fT reaches 2.5GHz and ft reaches 2.3GHz. Based on above researches, the better RF Si/SiGe/Si HBT will be made.

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Available abstract

Based on the process which the Si/SiGe/Si HBT is compatibility with Si, the researches on RF Si/SiGe/Si HBT's RF characterization and its fabrication have been done. The dependence of device characterization frequency fT and maximum oscillation frequency fmax on the key parameters: parasitical resistances and capacitances were analyzed, and these parameters were decided by device construction. RF Si/SiGe/Si HBT is fabricated, whose fT reaches 2.5GHz and ft reaches 2.3GHz. Based on above researches, the better RF Si/SiGe/Si HBT will be made.

Key concepts: Heterojunction bipolar transistor, Materials science, Radio frequency, Optoelectronics, Silicon-germanium, Fabrication, Oscillation (cell signaling), Electrical engineering

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