Shen Guang-di
Abstract
By optimizing the longitudinal,we have designed the SiGe/Si HBT parameter with technologies for low temperature. As a result, the SiGe/Si HBT with a current gain of 26000 in the temperature of liquid nitrogen (77K) is obtained.
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By optimizing the longitudinal,we have designed the SiGe/Si HBT parameter with technologies for low temperature. As a result, the SiGe/Si HBT with a current gain of 26000 in the temperature of liquid nitrogen (77K) is obtained.
Key concepts: Heterojunction bipolar transistor, Materials science, Optoelectronics, Liquid nitrogen, Current (fluid), Silicon-germanium, Electrical engineering, Silicon