Chemical Polishing Process for Copper and Its Alloy

The chemical polishing process and formula were investigated in depth with respect to the requirement for the surface pretreatment of copper materials by chemical passivation. The effects of the polishing solution composition and polishing conditions on the quality of the polished Cu were investigated. As the results, the optimum composition of the chemical polishing solution for the Cu materials was recommended to be composed of 50~55 mL/L phosphoric acid, 10~15 mL/L nitric acid, 25~30 mL/L oxalic acid,1.0~1.5 g/L carbamide,1 5~2 0 g/L coumarin, and 2 5 g/L sulfanilamide, while the optimized polishing conditions were suggested as temperature about 55 ℃ and polishing time 2~5 min.It was feasible to realize the optimized polishing of Cu and its alloys using the established optimal polishing bath and parameters, and the developed technology was characterized by the advantages of simple bath composition,easy operation,fast polishing,good brightness, and low pollution,etc.