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Development of Microwave SiGe Heterojunction Bipolar Transistors

Jia Hong

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Abstract

The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home\|made high vacuum/rapid thermal processing chemical vapor deposition equipment.The HBTs show good performance and industrial use value.The current gain is beyond 100;the breakdown voltage BV ceo is 3.3V,and the cut\|off frequency is 12.5GHz which is measured in packaged form.

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What this paper is about

The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home\|made high vacuum/rapid thermal processing chemical vapor deposition equipment.The HBTs show good performance and industrial use value.The current gain is beyond 100;the breakdown voltage BV ceo is 3.3V,and the cut\|off frequency is 12.5GHz which is measured in packaged form.

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Available abstract

The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home\|made high vacuum/rapid thermal processing chemical vapor deposition equipment.The HBTs show good performance and industrial use value.The current gain is beyond 100;the breakdown voltage BV ceo is 3.3V,and the cut\|off frequency is 12.5GHz which is measured in packaged form.

Key concepts: Heterojunction bipolar transistor, Materials science, Optoelectronics, Heterojunction, Microwave, Bipolar junction transistor, Heterostructure-emitter bipolar transistor, Chemical vapor deposition

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