2000•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access
Development of SiGe/Si film heterojunction bipolar transistors
L. Jay Guo, Kaicheng Li, Daoguang Liu, Jing Zhang, Qiang Yi, F. Arnaud d’Avitaya, Shiliu Xu
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Abstract
In the paper, development on MBE-based SiGe/Si heterojunction bipolar transistors (HBT) is described. The SiGe/Si film used in the present work was grown by SIVA32 molecular beam epitaxy system made in Riber, France. 3 micrometers process technology with poly-silicon emitter was used to develop SiGe HBT devices. The experimental results indicated that both the direct current characteristics and the cutoff frequency of SiGe HBT are satisfactory. The current gain (beta) of HBT devices is 50, when the collector voltage Vc equals 2V and the collector current Ic equals 5 mA. The cutoff frequency fT equals 5.1 GHz. And the uniformity of the cutoff frequency of HBT is quite good.