Base Region Optimization of SiGe Heterojunction Bipolar Transistors
Wensheng Qian
Abstract
Wensheng Qian
Abstract
Base-region optimization of SiGe heterojunction bipolar transistors(HBT) for high-frequency microwave power amplifier was investigated.It was found that the device was sensitive to Ge component and doping concentration in the base-region.By employing a heavily doped base region in conjunction with high Ge content in proper profile,DC property of the SiGe HBT could be effectively improved,and its cut-off frequency could also be enhanced.The improvement of major performance of transistor makes SiGe HBT technology more essential in microwave/RF applications.
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Base-region optimization of SiGe heterojunction bipolar transistors(HBT) for high-frequency microwave power amplifier was investigated.It was found that the device was sensitive to Ge component and doping concentration in the base-region.By employing a heavily doped base region in conjunction with high Ge content in proper profile,DC property of the SiGe HBT could be effectively improved,and its cut-off frequency could also be enhanced.The improvement of major performance of transistor makes SiGe HBT technology more essential in microwave/RF applications.
Key concepts: Heterojunction bipolar transistor, Materials science, Heterojunction, Optoelectronics, Bipolar junction transistor, Heterostructure-emitter bipolar transistor, Amplifier, Microwave