ScholarLens Back to search
2001•Acta Scicentiarum Naturalum Universitis PekinesisRequires access

13.5 GHz f_T SiGe Heterojunction Bipolar Transistor Fabricated by Planar Technology

Jia Chuan Lin, Yongkang Li

Open publisher page 0 citations

Abstract

A planar SiGe heterojunction bipolar transistor was fabricated using polysilicon emitter technology and SiGe base grown by Molecular Beam Epitaxy (MBE).The SiGe HBT ( S e=3?μm×8?μm) has a current gain β of 30 to 50,an emitter collector breakdown voltage BV CEO of 5?V,the maximum cutoff frequency f T of 13.5?GHz at room temperature.

About this research paper

What this paper is about

A planar SiGe heterojunction bipolar transistor was fabricated using polysilicon emitter technology and SiGe base grown by Molecular Beam Epitaxy (MBE).The SiGe HBT ( S e=3?μm×8?μm) has a current gain β of 30 to 50,an emitter collector breakdown voltage BV CEO of 5?V,the maximum cutoff frequency f T of 13.5?GHz at room temperature.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

A planar SiGe heterojunction bipolar transistor was fabricated using polysilicon emitter technology and SiGe base grown by Molecular Beam Epitaxy (MBE).The SiGe HBT ( S e=3?μm×8?μm) has a current gain β of 30 to 50,an emitter collector breakdown voltage BV CEO of 5?V,the maximum cutoff frequency f T of 13.5?GHz at room temperature.

Key concepts: Heterojunction bipolar transistor, Common emitter, Optoelectronics, Materials science, Bipolar junction transistor, Molecular beam epitaxy, Heterojunction, Cutoff frequency

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
13.5 GHz f_T SiGe Heterojunction Bipolar Transistor Fabricated by Planar Technology — Research Paper | ScholarLens