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A ferroelectric capacitor over bit-line (F-COB) cell for high density nonvolatile ferroelectric memories

Noboru Tanabe, Takeo Matsuki, Shinobu Saitoh, T. Takeuchi, Susumu Kobayashi, T. Nakajima, Y. Maejima, Y. Hayashi, Kazushi Amanuma, T. Hase, Yoichi Miyasaka, T. Kunio

Open publisher page 14 citations

Abstract

A ferroelectric capacitor over bit-line (F-COB) cell is proposed for high density nonvolatile ferroelectric memories (NVFRAMs). This memory cell with 0.7 /spl mu/m design rule was successfully fabricated using a newly-developed fabrication process, combining CMP and MOCVD techniques. Good ferroelectric properties of storage capacitor, having a remanent polarization of 15 /spl mu/C/cm/sup 2/ and leakage current density of 10/sup -6/ A/cm/sup 2/, have been realized without degradation in CMOS characteristics.

About this research paper

What this paper is about

A ferroelectric capacitor over bit-line (F-COB) cell is proposed for high density nonvolatile ferroelectric memories (NVFRAMs). This memory cell with 0.7 /spl mu/m design rule was successfully fabricated using a newly-developed fabrication process, combining CMP and MOCVD techniques. Good ferroelectric properties of storage capacitor, having a remanent polarization of 15 /spl mu/C/cm/sup 2/ and leakage current density of 10/sup -6/ A/cm/sup 2/, have been realized without degradation in CMOS characteristics.

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OpenAlex reports 14 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A ferroelectric capacitor over bit-line (F-COB) cell is proposed for high density nonvolatile ferroelectric memories (NVFRAMs). This memory cell with 0.7 /spl mu/m design rule was successfully fabricated using a newly-developed fabrication process, combining CMP and MOCVD techniques. Good ferroelectric properties of storage capacitor, having a remanent polarization of 15 /spl mu/C/cm/sup 2/ and leakage current density of 10/sup -6/ A/cm/sup 2/, have been realized without degradation in CMOS characteristics.

Key concepts: Ferroelectricity, Non-volatile memory, Ferroelectric capacitor, Materials science, Capacitor, Optoelectronics, Ferroelectric RAM, Fabrication

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