ScholarLens Back to search
2002•Unpublished venueRequires access

Ferroelectric nonvolatile memory technology with bismuth layer-structured ferroelectric materials

K. Arita, Y. Shimada, Yasuhiro Uemoto, S. Hayashi, Masamichi AZUMA, Yuji Judai, Tomonari Sumi, Eiji Fujii, T. Otsuki, L. D. McMillan, Carlos A. Paz de Araújo

Open publisher page 9 citations

Abstract

Ferroelectric nonvolatile memory (FeRAM) technology using thin films of a bismuth layer-structured ferroelectric material (also known as "Y-1") is presented. The exemplified Y-1 FeRAM exhibits excellent characteristics with regard to data transfer rate, operating voltages, etc., which cannot be achieved by other nonvolatile memories such as EEPROMs and FLASH. Preparation and characterization of Y-1 capacitors are also described, which reveal Y-1 seems to be a promising candidate for FeRAM applications because of its fatigue-free behaviour.

About this research paper

What this paper is about

Ferroelectric nonvolatile memory (FeRAM) technology using thin films of a bismuth layer-structured ferroelectric material (also known as "Y-1") is presented. The exemplified Y-1 FeRAM exhibits excellent characteristics with regard to data transfer rate, operating voltages, etc., which cannot be achieved by other nonvolatile memories such as EEPROMs and FLASH. Preparation and characterization of Y-1 capacitors are also described, which reveal Y-1 seems to be a promising candidate for FeRAM applications because of its fatigue-free behaviour.

Why it matters

OpenAlex reports 9 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Ferroelectric nonvolatile memory (FeRAM) technology using thin films of a bismuth layer-structured ferroelectric material (also known as "Y-1") is presented. The exemplified Y-1 FeRAM exhibits excellent characteristics with regard to data transfer rate, operating voltages, etc., which cannot be achieved by other nonvolatile memories such as EEPROMs and FLASH. Preparation and characterization of Y-1 capacitors are also described, which reveal Y-1 seems to be a promising candidate for FeRAM applications because of its fatigue-free behaviour.

Key concepts: Ferroelectric RAM, Non-volatile memory, Materials science, Ferroelectricity, Capacitor, Ferroelectric capacitor, Layer (electronics), Bismuth

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
Ferroelectric nonvolatile memory technology with bismuth layer-structured ferroelectric materials — Research Paper | ScholarLens