1983IEEE Transactions on Electron DevicesRequires access

Measurement of series resistance in IMPATT diodes

M.G. Adlerstein, Lowell H. Holway, S.L.G. Chu

Open publisher page 56 citations

Abstract

A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near 40 GHz. The values obtained are used to quantitatively explain other performance characteristics of the diodes.

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What this paper is about

A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near 40 GHz. The values obtained are used to quantitatively explain other performance characteristics of the diodes.

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OpenAlex reports 56 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near 40 GHz. The values obtained are used to quantitatively explain other performance characteristics of the diodes.

Key concepts: Diode, IMPATT diode, Equivalent series resistance, Oscillation (cell signaling), Optoelectronics, Materials science, Negative resistance, Step recovery diode

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