Measurement of series resistance in IMPATT diodes
M.G. Adlerstein, Lowell H. Holway, S.L.G. Chu
Abstract
M.G. Adlerstein, Lowell H. Holway, S.L.G. Chu
Abstract
A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near 40 GHz. The values obtained are used to quantitatively explain other performance characteristics of the diodes.
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A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near 40 GHz. The values obtained are used to quantitatively explain other performance characteristics of the diodes.
Key concepts: Diode, IMPATT diode, Equivalent series resistance, Oscillation (cell signaling), Optoelectronics, Materials science, Negative resistance, Step recovery diode