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2003•Unpublished venueRequires access

The initiation mechanism of N-type negative differential resistance areas on the IV-curves of IMPATT-diode in strong microwave field

Dmitry A. Usanov, Alexander V. Skripal, Anton V. Abramov, Aleksey A. Kletsov

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Abstract

The initiation mechanism of N-type negative differential resistance areas on the IV-curves of IMPATT-diode in strong microwave field had been described.

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What this paper is about

The initiation mechanism of N-type negative differential resistance areas on the IV-curves of IMPATT-diode in strong microwave field had been described.

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Available abstract

The initiation mechanism of N-type negative differential resistance areas on the IV-curves of IMPATT-diode in strong microwave field had been described.

Key concepts: IMPATT diode, Negative resistance, Diode, Microwave, Mechanism (biology), Field (mathematics), Differential (mechanical device), Optoelectronics

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