2014•IOSR Journal of Electronics and Communication EngineeringOpen access

Optically induced series resistance and microwave properties of n ++np++ X band Si IMPATT diode

Prithwiraj De

Abstract

The effect of optically generated reverse saturation current on the series resistance and negative resistance properties of single drift region (n ++ np ++ ) X band Si IMPATT diodes under (i) punch through, (ii) exact and (iii) undepleted field distributions have been studied.Simulation following Gummel-Blue approach [1] indicates an overall degradation of microwave properties with an increase of series resistance due to enhancement of illuminated leakage current.

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Key concepts: IMPATT diode, Equivalent series resistance, Microwave, Diode, Optoelectronics, Materials science, Series (stratigraphy), X band