ScholarLens Back to search
1993•IEEE Transactions on Electron DevicesRequires access

A study of the electrical series resistance of silicon IMPATT diodes

Mahaan Mitra, Mrinmay Das, Samares Kar, S.K. Roy

Open publisher page 19 citations

Abstract

A theoretical study of the relationship between the electrical series resistance (R/sub s/) of an IMPATT diode and the threshold current for oscillation and the corresponding frequency has been carried out, considering the inequality of the ionization rates and drift velocities of the two types of charge carriers in silicon. The series resistance has been obtained experimentally by measuring the threshold current for oscillation and the corresponding oscillation frequency with an X-band silicon SDR device embedded in a resonant-cap cavity. The results indicate that the method is a suitable one for determining R/sub s/, and they agree with the manufacturer's data. The method would be suitable for determining R/sub s/ for millimeter-wave diodes with appropriate values of the ionization rate ratios at maximum electric field.>

About this research paper

What this paper is about

A theoretical study of the relationship between the electrical series resistance (R/sub s/) of an IMPATT diode and the threshold current for oscillation and the corresponding frequency has been carried out, considering the inequality of the ionization rates and drift velocities of the two types of charge carriers in silicon. The series resistance has been obtained experimentally by measuring the threshold current for oscillation and the corresponding oscillation frequency with an X-band silicon SDR device embedded in a resonant-cap cavity. The results indicate that the method is a suitable one for determining R/sub s/, and they agree with the manufacturer's data. The method would be suitable for determining R/sub s/ for millimeter-wave diodes with appropriate values of the ionization rate ratios at maximum electric field.>

Why it matters

OpenAlex reports 19 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

A theoretical study of the relationship between the electrical series resistance (R/sub s/) of an IMPATT diode and the threshold current for oscillation and the corresponding frequency has been carried out, considering the inequality of the ionization rates and drift velocities of the two types of charge carriers in silicon. The series resistance has been obtained experimentally by measuring the threshold current for oscillation and the corresponding oscillation frequency with an X-band silicon SDR device embedded in a resonant-cap cavity. The results indicate that the method is a suitable one for determining R/sub s/, and they agree with the manufacturer's data. The method would be suitable for determining R/sub s/ for millimeter-wave diodes with appropriate values of the ionization rate ratios at maximum electric field.>

Key concepts: IMPATT diode, Equivalent series resistance, Diode, Oscillation (cell signaling), Silicon, Series (stratigraphy), Optoelectronics, Ionization

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
A study of the electrical series resistance of silicon IMPATT diodes — Research Paper | ScholarLens