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2014•IEEE Electron Device LettersRequires access

3.7 kV Vertical GaN PN Diodes

Isik C. Kizilyalli, Andrew P. Edwards, Hui Fan Nie, Dave Bour, T. Prunty, Don Disney

Open publisher page 139 citations

Abstract

There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (104cm-2) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (Rsp) of 2.95 mΩ-cm2.

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What this paper is about

There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (104cm-2) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (Rsp) of 2.95 mΩ-cm2.

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OpenAlex reports 139 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (104cm-2) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (Rsp) of 2.95 mΩ-cm2.

Key concepts: Diode, Metalorganic vapour phase epitaxy, Optoelectronics, Wide-bandgap semiconductor, Gallium nitride, Materials science, Semiconductor, Physics

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